The method of wherein the sacrificial layer consists essentially of an electrically conductive material. If material 50 were not removed in such embodiments, it could short conductive components across an upper surface of stacks A pair of opposing corners are defined where the sidewalls join the substrate.
In an exemplary process, a substrate is provided within a CVD reaction chamber Mitel semiconducter case with a first ratio of a silicon precursor gas to a nitrogen precursor gas. However, fragment 10 a of FIG.
The method of wherein the sacrificial layer consists essentially of an electrically insulative material. The silicon can then be utilized to support a layer of photoresist formed over the silicon nitride. Opposing corners 63 are closer to one another than opposing corners 43 FIG. The patterned structure has a pair of opposing sidewalls extending upwardly from the substrate.
The method of wherein the second material comprises silicon dioxide. The method of claim 29 wherein the sacrificial layer comprises silicon and is substantially free of nitrogen, and the third material comprises silicon nitride. Photolithographic processing is utilized for patterning numerous materials, including silicon nitride.
However, a problem which occurs during the patterning of photoresist 24 is that photoresist adjacent blocks 26 does not remove as well as photoresist which is further removed from blocks The method of claim 9 wherein the second material comprises silicon and is substantially free of nitrogen, and the third material comprises silicon nitride.
As shown, foot portions 30 FIG. A method of utilizing photoresist for patterning a silicon nitride material is described with reference to FIGS. A first material comprising silicon and nitrogen is formed. An imagable material is formed on the second material, and patterned.
Accordingly, the portions beneath foot portions 30 are etched less than are portions of layers 16, 18, 20 and 22 not beneath foot portions 30, causing formation of laterally extending portions The structure shown in FIG. The method of claim 1 wherein the imagable material is photoresist and the patterning comprises exposing the photoresist to deep UV radiation.
The structure further comprises a third layer consisting essentially of imagable material on the second layer. In an alternative embodiment of the invention, layer  50 can comprise oxygen, and can, for example, comprise, consist of, or consist essentially of silicon dioxide.
The sacrificial layer is removed from the patterned structure. Substrate 12 can comprise, for example, monocrystalline silicon.
The second layer comprises silicon and is free of nitrogen. If layer  50 is to comprise, consist of, or consist essentially of either silicon or conductively doped silicon, such layer can be formed by chemical vapor deposition of silicon or polysilicon over layer In referring to FIG.
Wafer fragment 10 a of FIG. In another aspect, the invention encompasses a method of forming a patterned structure. Foot portions 30 cause laterally extending portions 42 because the photoresist of foot portions 30 is etched by the conditions which etch layers 16, 18, 20 and 22, and is ultimately removed to allow portions of layers 16, 18, 20 and 22 beneath foot regions 30 to be removed.) Inventor Scott DeBoer John Moore Current Assignee (The listed assignees may be inaccurate.
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